My speciality. Овчинникова Т.Е - 25 стр.

      2.8.3 Find Russian equivalents to the English words

free electrons                        дырочный ток
conduction by holes                   потребление энергии
intrinsic                             примесные полуповодники
mutually opposed particle flow        избыточные электроны
hole current                          дырочная проводимость
extrinsic semiconductors              свободные электроны
excess electrons                      трехэлектронные приборы
                                        необратимого действия
three terminal reciprocal             взаимно противоположные
  devices                               потоки частиц
power consumption                     чистый, беспримесный

      2.8.4 Find synonyms, translate them

common a, methods n, differ v, as far back as, apply v, nowadays adv, occur v, put
into service, limit n, ordinary a, conventional a, for the time being, vary v, as early as,
employ v, put into operation, take place v, techniques n, dimension n, size n,
boundary n.

      2.8.5 Find antonyms, translate them

distinguished a, on the other hand, charge v, disconnect v, intrinsic a, unlike adv,
conductor n, lower a, upper a, indirectly adv, directly adv, undistinguished a,
increase v, extrinsic a, up adv, insulator n, connect v, down adv, lik e adv,
decrease v, on the one hand,discharge v.

     2.8.6 Find the sentence with independent participle construction
(paragraph 1)

                                    TRANSISTORS

 1. In vacuum tubes, the control of free electrons in vacu u m is of primary interest.
However, in transistors and semiconductors in general, the current may be carried by
two distinguishable and distinctly different means — conduction by electrons and
conduction by "holes". In intrinsic (pure) semiconductor materials, these two
conduction mechanisms contribute mutually opposed particle flow. A voltage being
applied, the current consists of the absolute sum of the electron and hole currents
(different sign of charge cancels different direction of motion). However, in the
commonly used doped (extrinsic) semiconductors such as germanium and silicon,
conduction, in some cases, is caused by excess electrons or by excess holes.
Transistor interaction occurs in the region where excess electrons control excess
holes (or vice versa). Consequently, the semiconductor material (i.e. the medium in
which transistor action takes place) is of basic concern in transistors.
2. In application, transistors are almost analogous to vacuum tubes. For instance, they
are three-terminal, nonre-ciprocal, active devices. The attractiveness of the transistor