Высокоуровневое проектирование встраиваемых систем. Платунов А.Е - 103 стр.

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Университет ИТМО | Санкт-Петербург

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RS
422 *
2
FLASH
U=3 or 5v, S=8..16Mbit/8/16,T=TSOP48/0.5
AM29LV160B-80EI
AM29F800
B-80EI
Altera
FLEX
10K10
3v
EPF10K10ATC144-3
Seiko
RTC
U=5V, T=SOP14/1.27
SR8583 (RTC-8583)
Microchip
E
2
PROM
U=5V, S=8Kbit*8/1,T=SO8
SW24
LC65
(
24LC
65)
Power PIC
U=5v, T=K04-052 SO28/1.27
PIC16F876-04/SO
2*
MIC4576BU
IOP/SP
AMD 186
cc
U=3v, T=PQFP160
/
AM186CC-40KC/W
Dallas Semiconductor
1–Wire TM Digital Thermometer
U=5v, T=PR35
DS1820
Dallas Semiconductor
1–Wire TM Digital Thermometer
U=5v, T=PR35
DS1820
MAXIM
µP Supervisory Circuit
U=5v, T=SOIC16/1.27
MAX807NCWE
U=5v, T=M16A SO16/1.27
DS34C
87
TM
Quad TRISTATE Differential Line Driver
HDLC A
National Semiconductor
DS34C86TM
Quad CMOS Differential Line Receiver
U=5v, T=M16A SO16/1.27
DS34C87TM
Quad TRISTATE Differential Line Driver
HDLC A,B
National Semiconductor
DS34C86TM
Quad CMOS Differential Line Receiver
I
2
C
int_i86
MAXIM
RS
-
232
Transceivers with AutoShutdown
U
=
5
v
,
T
=
SO
/SSOP28
MAX211
EEAI
MAXIM
RS-232
Transceivers with AutoShutdown
U=5v, T=SO/SSOP28
MAX211EEAI
RS232
(8-out, 10 -
in
)
2
1
NMI_186
BAT.OK
BAT.OK
INT186
SSIO RC
U=3V, T=SMD-MINI-FLAT
TLP124
* 3
SSIO RC
(коммутатор)
U=3V, T
=SMD-MINI-FLAT
TLP124 * 3
Гальваническая развязка
SRAM
U=3 or 5V, S=64..256Kbit/16, T=TSOP II/0.8
AS7C
34098
ISSI64C
16
UCS
LCS
CNS
_
OUT
/
2
COM
1
(EXP
)
COM1 (EXS)
CONSOL
Гальваническая развязка
TLP
112
*
3
,
MAX
202
ECE
,
TME
0505S
U=3
V,
5
V (
TME0505
S
)
CNS_
IN
/1
JTAG
int_186/4
CS_186
SSIO * 2
(in,out,sync)
JTAG
D
/8
A/6
+10
V
Microchip
CAN
U=3V, T=SOIC18
MCP2510
Microchip
CAN
U=3
V, T
=SOIC
18
MCP2510
Рис. 2.13б Структурная схема модуля МАСТЕР версии М3М (правая часть)
102

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