Введение в спектроскопию диэлектриков. Часть I. Васильев А.Н - 216 стр.

UptoLike

ВУЗ: 

МГУ | Москва

Составители: 

Рубрика: 

97. Jahn H.A. and Teller E., Proc. Roy. Soc., v. A161, p. 220, 1937.
98. Condon E.U., Phys. Rev., v. 32, p. 358, 1928.
99. Frank J., Trans. Faraday Soc., v. 21, p. 536, 1925.
100. Braiisford A.D. and Chang T.Y., J. Chem. Phys., v. 53, p. 3108, 1970.
101. Freed K.F. and Jortner J., J. Chem. Phys., v. 52, p. 6272, 1970.
102. Riseberg L.A. and Moos H.W., Phys. Rev., v. 174, p. 429, 1968.
103. Shockley W. and Bardeen J., Phys. Rev., v. 77, p. 407, 1949.
104. Frohlich H. Adv. in Phys., v. 3, p. 325, 1954.
105. Frohlich H., in Polarons and Excitons (eds. Koper C.G. and Whitfield
G.D.), Edinburgh: Oliver and Boyd, 1962.
106. Feynman R.P., Phys. Rev., v. 97, p. 660, 1955.
107. Feynman R.P., Statistical Mechanics, Massachusetts: Benjamin, 1972.
108. Landau L.D., Phys. Z. Sowjetunion, v. 3, p. 664, 1933.
109. Ïåêàð Ñ.È., Èññëåäîâàíèÿ ïî ýëåêòðîííîé òåîðèè êðèñòàëëîâ, Ì.:
Ãîñòåõèçäàò, 1951.
110. Toyozawa Y., Progr. Theor. Phys., v. 26, p. 29, 1961.
111. Toyozawa Y., Exciton Lattice Interaction. Fluctuation, Relaxation and
Defect Formation. Technical Report ISSP, Japan. Ser. a, N648, 1974.
112. Toyozawa Y., in Relaxation of Elementary Excitations, ed. by Kubo R.
and Hanamura E., Berlin-Heidelberg-New York:Springer, 1980.
113. Toyozawa Y., Semiconductors and Insulators, v. 5, p. 175, 1983.
114. Sumi A., J. Phys. Soc. Japan, v. 43, p. 1286, 1977.
115. Ðàøáà Å.È., Îïòèêà è ñïåêòðîñêîïèÿ, ò. 2, ñ. 75, 1957.
116. Ðàøáà Å.È., Èçâ. ÀÍ ÑÑÑÐ, ñåð. ôèç., ò. 40, ñ. 1973, 1976.
117. Mott N.F. and Stoneham A.M., J. Phys. C: Solid State Phys., v. 10, p.
3391, 1977.
118. Song K.S., Williams R.T., Self-Trapped Excitons, Springer, 1995.
119. Kanzig W., Phys. Rev., v. 99, p. 1890, 1955.
120. Castner T.G. and Kanzig W., J. Phys. Chem. Sol., v. 3, p. 178, 1957.
121. Seidel H. and Wolf H.C., in Physics of Color Centers, New York-Lon-
don: Academic Press, p. 537, 1968.
122. Kabler M.N., in Point Defects in Solids, New York:Plenum Press, p.
327, 1972
123. Àëóêåð Ý.Ä.,Ëóñèñ Ä.Þ., ×åðíîâ Ñ.À., Ýëåêòðîííûå âîçáóæäåíèÿ è
ðàäèîëþìèíåñöåíöèÿ ùåëî÷íî-ãàëîèäíûõ êðèñòàëëîâ. Ðèãà: Çèíàòíå
1979
124. Ëóùèê ×.Á. è Ëóùèê À.×., Ðàñïàä ýëåêòðîííûõ âîçáóæäåíèé ñ
îáðàçîâàíèåì äåôåêòîâ â òâåðäûõ òåëàõ, Ì.:Íàóêà, 1989.
125. Itoh N., Semiconductors and Insulators, v. 5, p. 165, 1983.
215
97.    Jahn H.A. and Teller E., Proc. Roy. Soc., v. A161, p. 220, 1937.
98.    Condon E.U., Phys. Rev., v. 32, p. 358, 1928.
99.    Frank J., Trans. Faraday Soc., v. 21, p. 536, 1925.
100.   Braiisford A.D. and Chang T.Y., J. Chem. Phys., v. 53, p. 3108, 1970.
101.   Freed K.F. and Jortner J., J. Chem. Phys., v. 52, p. 6272, 1970.
102.   Riseberg L.A. and Moos H.W., Phys. Rev., v. 174, p. 429, 1968.
103.   Shockley W. and Bardeen J., Phys. Rev., v. 77, p. 407, 1949.
104.   Frohlich H. Adv. in Phys., v. 3, p. 325, 1954.
105.   Frohlich H., in Polarons and Excitons (eds. Koper C.G. and Whitfield
       G.D.), Edinburgh: Oliver and Boyd, 1962.
106.   Feynman R.P., Phys. Rev., v. 97, p. 660, 1955.
107.   Feynman R.P., Statistical Mechanics, Massachusetts: Benjamin, 1972.
108.   Landau L.D., Phys. Z. Sowjetunion, v. 3, p. 664, 1933.
109.   Ïåêàð Ñ.È., Èññëåäîâàíèÿ ïî ýëåêòðîííîé òåîðèè êðèñòàëëîâ, Ì.:
       Ãîñòåõèçäàò, 1951.
110.   Toyozawa Y., Progr. Theor. Phys., v. 26, p. 29, 1961.
111.   Toyozawa Y., Exciton Lattice Interaction. Fluctuation, Relaxation and
       Defect Formation. Technical Report ISSP, Japan. Ser. a, N648, 1974.
112.   Toyozawa Y., in Relaxation of Elementary Excitations, ed. by Kubo R.
       and Hanamura E., Berlin-Heidelberg-New York:Springer, 1980.
113.   Toyozawa Y., Semiconductors and Insulators, v. 5, p. 175, 1983.
114.   Sumi A., J. Phys. Soc. Japan, v. 43, p. 1286, 1977.
115.   Ðàøáà Å.È., Îïòèêà è ñïåêòðîñêîïèÿ, ò. 2, ñ. 75, 1957.
116.   Ðàøáà Å.È., Èçâ. ÀÍ ÑÑÑÐ, ñåð. ôèç., ò. 40, ñ. 1973, 1976.
117.   Mott N.F. and Stoneham A.M., J. Phys. C: Solid State Phys., v. 10, p.
       3391, 1977.
118.   Song K.S., Williams R.T., Self-Trapped Excitons, Springer, 1995.
119.   Kanzig W., Phys. Rev., v. 99, p. 1890, 1955.
120.   Castner T.G. and Kanzig W., J. Phys. Chem. Sol., v. 3, p. 178, 1957.
121.   Seidel H. and Wolf H.C., in Physics of Color Centers, New York-Lon-
       don: Academic Press, p. 537, 1968.
122.   Kabler M.N., in Point Defects in Solids, New York:Plenum Press, p.
       327, 1972
123.   Àëóêåð Ý.Ä.,Ëóñèñ Ä.Þ., ×åðíîâ Ñ.À., Ýëåêòðîííûå âîçáóæäåíèÿ è
       ðàäèîëþìèíåñöåíöèÿ ùåëî÷íî-ãàëîèäíûõ êðèñòàëëîâ. Ðèãà: Çèíàòíå
       1979
124.   Ëóùèê ×.Á. è Ëóùèê À.×., Ðàñïàä ýëåêòðîííûõ âîçáóæäåíèé ñ
       îáðàçîâàíèåì äåôåêòîâ â òâåðäûõ òåëàõ, Ì.:Íàóêà, 1989.
125.   Itoh N., Semiconductors and Insulators, v. 5, p. 165, 1983.




                                     215

Страницы