My speciality. Овчинникова Т.Е - 28 стр.

       2.9.4 Find synonyms, translate them

ordinary а, differ v, complicated а, application is made, chiefly adv, vary v, precision
n, use is made, conventional a, accuracy n, mainly adv, complex a.

       2.9.5 Find antonyms, translate them

act v, seldom adv, input current, sophisticated a, transmit v, result from v, minority
carriers, reduce v, counteract v, result in v, frequently adv, output current, raise v, re-
ceive v, majority carriers, simple a.

     2.9.6 Analyse these sentences before translating: divide nominative and
verb word-combinations. Find predicates and subjects, identify their
grammatical features

1. This results in voltage and power amplification without current amplification. 2.
Current amplification is possible only if, the space charge action of the minority
carriers, requiring a concentration increase of the majority carriers, comes into play.

       2.9.7 Read the questions before reading the text, find the answers in the
text

1. What is a common principle of the mechanism of some transistor types? 2. What is
the cause of blocking? 3. What is essential for the functioning of the n-p-n transistor?

                             THE N-P-N TRANSISTORS

We have emphasized in the introduction, as a common principle of the mechanism of
some transistor types, that the conductance of a current path containing a strong "local"
current source is influenced by the small controlling power of a current coming from
"far away". In the filamentary, transistor the influenced current path is a piece of
ohmic conductor, whereas in the n-p-n transistor it is a reverse-biased p-n junction(see
Figure 10.). The in the cause of the blocking effect of such a p-n junction is the
depletion of minority carriers diffusion tails, which ordinarily act as current sources.
Counteracting this carrier depletion by the injection of a varying number of
minority carriers results in a control action on the reverse current of the junction. The
injector or emitter in an n-p-n transistor is not a forward-biased point contact but
another p-n junction which is biased in the forward direction, in contrast to the
collector. Thus we arrive at the n-p-n transistor shown in Figure 10, as the final stage.
The operation of this transistor type is, therefore, based roughly on the following
mechanisms: the left n-p junction, which is biased in the forward direction emits
electrons into the central p-layer; these electrons are collected by the p-n junction on
the right which is biased in the reverse direction, and the reverse resistance of this p-n
junction acting as collector is a sensitive function of the number of captured electrons.
The electron currents flowing in the n-p-n transistor are therefore essential for its
functioning.