My speciality. Овчинникова Т.Е - 29 стр.

        Notes to the text

forward biased point contact — смещенный точечный контакт
forward direction — прямое направление
reverse-biased p-n junction — обратно-смещенный p-n переход




Figure 10-The Transformation of the Filamentary Transistor into the n-p-n Transistor

       2.9.8 Translate the word-combinations

current amplification, captured electrons, forward biased, reverse biased, current
path, controlling power, filamentary transistor, ohmic conductor, blocking effect,
diffusion tails, reverse current, forward biased point contact transistor.

       2.9.9 Answer the questions

1. What is the conductance of a current path containing a- strong local current source
influenced by? 2. What is the influenced current path in the filamentary transistor and
the n-p-n transistor? 3. What is the cause of the blocking effect of a p-n junction? 4.
What is the injector or emitter in an n-p-n transistor? 5. What is the operation of this
transistor type based on?

       2.9.10 Define parts of speech. Underline suffixes and, translate the words

conductance, ohmic, conductor, depletion, minority, ordinarily, emitter, final,
roughly, layer, sensitive.

       2.9.11 Read and translate without a dictionary

                     ABOUT THE SO-CALLED P-N JUNCTION

Our ideas about the structure and mechanism of commercial crystal rectifiers have
changed during recent years. The introduction of a radically new type of rectifier is
partially responsible for this change. This is the so-called p-n junction. It was developed
by W. Shockley but as early as 1938 B. Da-vydov pointed out that strong unipolar
effects are to be expected at the junction between p-type and n-type semiconductors.