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+CJ =1.420e-03 CJSW =3.800e-10
+MJ =5.500e-01 MJSW =3.900e-01
+PB =1.020e+00 TT =0.000e+00
+PBSW =9.400e-01
* ----------------------------------------------------------------------
.SUBCKT ND A C PARAMS: AREA=1e-12 PERI=4e-6
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format : PSPICE
* model : DIODE
* process : CS[ADFI]
* revision : N/C;
* extracted : CSA C61417; 1998-10; ese(487)
* doc# : 9933016 REV_N/C
* ----------------------------------------------------------------------
* TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
* TERMINALS: A=anode=P-region C=cathode=N-region
* VARIABLES: M (mulitiplier), AREA [m^2], PERI [m].
* NOTE: The role of a protection DIODE is to conduct ESD current to VDD
* (or from VSS). This forward bias is NOT modelled, only leakage current
* and capacitance during normal operation. Any inductive load etc that
* will give forward bias, must be limited by other components to within
* Operating Conditions, otherwise parasitic bipolar action can occur.
D1 A C NDINSUBA {AREA}
D2 A C NDINSUBS {PERI}
.ENDS ND
.MODEL NDINSUBA D
+IS =2.000e-05 N =1.000e+00
+CJO =9.300e-04 M =3.100e-01 VJ =6.900e-01
+TT =0.000e+00 FC =0.500e+00
+EG =1.110e+00 XTI =3.000e+00
+AF =1.000e+00 KF =0.000e+00
.MODEL NDINSUBS D
+IS =0.000e+00 N =1.000e+00
+CJO =2.800e-10 M =1.900e-01 VJ =6.900e-01
+TT =0.000e+00 FC =0.500e+00
+EG =1.110e+00 XTI =3.000e+00
+AF =1.000e+00 KF =0.000e+00
* ----------------------------------------------------------------------
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ПРИЛОЖЕНИЕ 2
МАРШРУТ ПРОЕКТИРОВАНИЯ ЗАКАЗНЫХ СБИС
В САПР TANNER PRO
Рис. П2.1. Маршрут проектирования заказных СБИС в САПР Tanner Pro от схемы
электрической принципиальной до топологии
