Субмикронные интегральные схемы: элементная база и проектирование. Рындин Е.А - 70 стр.

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+PDIBLC1=1.076e-01 PDIBLC2=1.453e-03 DROUT =5.000e-01
+A0 =2.208e+00 A1 =0.000e+00 A2 =1.000e+00
+PVAG =0.000e+00 VSAT =1.178e+05 AGS =2.490e-01
+B0 =-1.76e-08 B1 =0.000e+00 DELTA =1.000e-02
+PDIBLCB=2.583e-01
* *** Geometry modulation related parameters ***
+W0 =1.184e-07 DLC =8.285e-09
+DWC =2.676e-08 DWB =0.000e+00 DWG =0.000e+00
+LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00
+LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00
+WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00
+WWN =1.000e+00
* *** Temperature effect parameters ***
+AT =3.300e+04 UTE =-1.80e+00
+KT1 =-3.30e-01 KT2 =2.200e-02 KT1L =0.000e+00
+UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00
+PRT =0.000e+00
* *** Overlap capacitance related and dynamic model parameters +CGDO
=2.100e-10 CGSO =2.100e-10 CGBO =1.100e-10
+CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01
+CF =0.000e+00 ELM =5.000e+00
+XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01
* *** Parasitic resistance and capacitance related model parameters +RDSW
=6.043e+02
+CDSC =0.000e+00 CDSCB =0.000e+00 CDSCD =8.448e-05
+PRWB =0.000e+00 PRWG =0.000e+00 CIT =1.000e-03
* *** Process and parameters extraction related model parameters +TOX
=7.700e-09 NGATE =0.000e+00
+NLX =1.918e-07
* *** Substrate current related model parameters ***
+ALPHA0 =0.000e+00 BETA0 =3.000e+01
* *** Noise effect related model parameters ***
+AF =1.400e+00 KF =2.810e-27 EF =1.000e+00
+NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12
* *** Common extrinsic model parameters ***
+LINT =-1.67e-08 WINT =2.676e-08 XJ =3.000e-07
+RSH =8.200e+01 JS =2.000e-05
+CJ =9.300e-04 CJSW =2.800e-10
+MJ =3.100e-01 MJSW =1.900e-01
+PB =6.900e-01 TT =0.000e+00
+PBSW =9.400e-01
* ----------------------------------------------------------------------
.MODEL MODPM PMOS LEVEL=7
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format : PSPICE
* model : MOS BSIM3v3
* process : CS[ADFI]
* revision : N/C;
* extracted : CSA C61417; 1998-10; ese(487)
* doc# : 9933016 REV_N/C
* ----------------------------------------------------------------------
* TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
*
140
* *** Flags ***
+MOBMOD =1.000e+00 CAPMOD =2.000e+00
+NLEV =0
* *** Threshold voltage related model parameters ***
+K1 =6.327e-01
+K2 =1.996e-02 K3 =7.833e+00 K3B =-4.26e+00
+NCH =7.776e+16 VTH0 =-8.95e-01
+VOFF =-1.13e-01 DVT0 =3.985e-01 DVT1 =2.752e-01
+DVT2 =-1.97e-02 KETA =1.673e-02
+PSCBE1 =5.000e+09 PSCBE2 =1.000e-10
+DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00
* *** Mobility related model parameters ***
+UA =1.000e-12 UB =1.465e-18 UC =-6.55e-11
+U0 =1.199e+02
* *** Subthreshold related parameters ***
+DSUB =5.000e-01 ETA0 =7.085e-02 ETAB =-1.94e-02
+NFACTOR=5.406e-01
* *** Saturation related parameters ***
+EM =4.100e+07 PCLM =4.597e+00
+PDIBLC1=1.000e-04 PDIBLC2=1.772e-02 DROUT =5.000e-01
+A0 =1.201e+00 A1 =0.000e+00 A2 =1.000e+00
+PVAG =0.000e+00 VSAT =2.000e+05 AGS =1.658e-01
+B0 =9.747e-08 B1 =0.000e+00 DELTA =1.000e-02
+PDIBLCB=-1.00e-03
* *** Geometry modulation related parameters ***
+W0 =2.000e-06 DLC =-8.24e-08
+DWC =4.990e-08 DWB =0.000e+00 DWG =0.000e+00
+LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00
+LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00
+WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00
+WWN =1.000e+00
* *** Temperature effect parameters ***
+AT =3.300e+04 UTE =-1.30e+00
+KT1 =-6.30e-01 KT2 =2.200e-02 KT1L =0.000e+00
+UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00
+PRT =0.000e+00
* *** Overlap capacitance related and dynamic model parameters +CGDO
=1.900e-10 CGSO =1.900e-10 CGBO =1.100e-10
+CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01
+CF =0.000e+00 ELM =5.000e+00
+XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01
* *** Parasitic resistance and capacitance related model parameters +RDSW
=1.617e+03
+CDSC =3.660e-04 CDSCB =2.943e-05 CDSCD =1.970e-05
+PRWB =0.000e+00 PRWG =0.000e+00 CIT =1.816e-04
* *** Process and parameters extraction related model parameters
+TOX =1.500e-08 NGATE =0.000e+00
+NLX =2.231e-07
* *** Substrate current related model parameters ***
+ALPHA0 =0.000e+00 BETA0 =3.000e+01
* *** Noise effect related model parameters ***
+AF =1.290e+00 KF =1.090e-27 EF =1.000e+00
+NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12
* *** Common extrinsic model parameters ***
+LINT =-8.24e-08 WINT =4.990e-08 XJ =3.000e-07
+RSH =1.560e+02 JS =2.000e-05