Субмикронные интегральные схемы: элементная база и проектирование. Рындин Е.А - 68 стр.

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135
Параметры SPICE-моделей КМОП-библиотеки AMS-0,8 мкм:
.MODEL MODN NMOS LEVEL=7
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format : PSPICE
* model : MOS BSIM3v3
* process : CY[EB]
* revision : B;
* extracted : CYE I310SE00; 1999-03; ese(487)
* doc# : 9933006 REV_B
* ----------------------------------------------------------------------
* TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
* *** Flags ***
+MOBMOD =1.000e+00 CAPMOD =2.000e+00
+NLEV =0
* *** Threshold voltage related model parameters ***
+K1 =1.183e+00
+K2 =-1.59e-01 K3 =1.404e-01 K3B =-3.19e-01
+NCH =6.937e+16 VTH0 =8.357e-01
+VOFF =-9.95e-02 DVT0 =3.368e+00 DVT1 =7.995e-01
+DVT2 =-1.72e-01 KETA =-2.55e-02
+PSCBE1 =4.194e+08 PSCBE2 =1.000e-04
+DVT0W =-3.78e-01 DVT1W =2.061e+05 DVT2W =-1.36e-01
* *** Mobility related model parameters ***
+UA =1.000e-12 UB =2.199e-18 UC =5.554e-11
+U0 =4.872e+02
* *** Subthreshold related parameters ***
+DSUB =5.000e-01 ETA0 =6.982e-03 ETAB =-2.63e-02
+NFACTOR=6.710e-01
* *** Saturation related parameters ***
+EM =4.100e+07 PCLM =1.101e+00
+PDIBLC1=4.797e-02 PDIBLC2=9.152e-04 DROUT =5.000e-01
+A0 =8.383e-01 A1 =0.000e+00 A2 =1.000e+00
+PVAG =0.000e+00 VSAT =9.079e+04 AGS =1.583e-01
+B0 =2.356e-07 B1 =0.000e+00 DELTA =1.000e-02
+PDIBLCB=3.040e-01
* *** Geometry modulation related parameters ***
+W0 =1.633e-06 DLC =2.090e-07
+DWC =3.853e-07 DWB =0.000e+00 DWG =0.000e+00
+LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00
+LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00
+WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00
+WWN =1.000e+00
* *** Temperature effect parameters ***
+AT =3.300e+04 UTE =-1.80e+00
+KT1 =-4.11e-01 KT2 =2.200e-02 KT1L =0.000e+00
+UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00
+PRT =0.000e+00
* *** Overlap capacitance related and dynamic model parameters +CGDO
=3.500e-10 CGSO =3.500e-10 CGBO =1.500e-10
+CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01
+CF =0.000e+00 ELM =5.000e+00
+XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01
136
* *** Parasitic resistance and capacitance related model parameters ***
+RDSW =1.776e+03
+CDSC =1.269e-03 CDSCB =3.987e-04 CDSCD =9.439e-05
+PRWB =0.000e+00 PRWG =0.000e+00 CIT =2.566e-05
* *** Process and parameters extraction related model parameters ***
+TOX =1.585e-08 NGATE =0.000e+00
+NLX =1.000e-10
* *** Substrate current related model parameters ***
+ALPHA0 =0.000e+00 BETA0 =3.000e+01
* *** Noise effect related model parameters ***
+AF =1.451e+00 KF =2.330e-26 EF =1.000e+00
+NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12
* *** Common extrinsic model parameters ***
+LINT =2.090e-07 WINT =3.853e-07 XJ =3.000e-07
+RSH =2.500e+01 JS =1.000e-05
+CJ =2.900e-04 CJSW =2.300e-10
+MJ =4.600e-01 MJSW =3.300e-01
+PB =8.600e-01 TT =0.000e+00
+PBSW =8.600e-01
* ----------------------------------------------------------------------
.MODEL MODP PMOS LEVEL=7
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format : PSPICE
* model : MOS BSIM3v3
* process : CY[BE]
* revision : N/C;
* extracted : CYE I310SE00; 1999-03; ese(487)
* doc# : 9933006 REV_B
* ----------------------------------------------------------------------
* TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
* *** Flags ***
+MOBMOD =1.000e+00 CAPMOD =2.000e+00
+NLEV =0
* *** Threshold voltage related model parameters ***
+K1 =5.752e-01
+K2 =-3.60e-02 K3 =8.354e+00 K3B =2.133e-01
+NCH =3.659e+16 VTH0 =-7.44e-01
+VOFF =-9.71e-02 DVT0 =7.075e-01 DVT1 =4.135e-01
+DVT2 =-1.98e-01 KETA =-1.18e-03
+PSCBE1 =1.459e+08 PSCBE2 =2.562e-07
+DVT0W =6.991e+00 DVT1W =6.689e+05 DVT2W =1.091e-01
* *** Mobility related model parameters ***
+UA =1.184e-09 UB =2.053e-18 UC =-2.36e-11
+U0 =1.972e+02
* *** Subthreshold related parameters ***
+DSUB =5.000e-01 ETA0 =6.488e-02 ETAB =-1.81e-02
+NFACTOR=6.729e-01
* *** Saturation related parameters ***
+EM =4.100e+07 PCLM =2.335e+00
+PDIBLC1=1.056e-02 PDIBLC2=2.002e-03 DROUT =5.000e-01
+A0 =6.233e-01 A1 =0.000e+00 A2 =1.000e+00
+PVAG =0.000e+00 VSAT =9.829e+04 AGS =1.540e-01
+B0 =2.667e-07 B1 =0.000e+00 DELTA =1.000e-02

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