Субмикронные интегральные схемы: элементная база и проектирование. Рындин Е.А - 69 стр.

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137
+PDIBLCB=3.714e-01
* *** Geometry modulation related parameters ***
+W0 =6.651e-07 DLC =5.486e-08
+DWC =3.844e-07 DWB =0.000e+00 DWG =0.000e+00
+LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00
+LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00
+WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00
+WWN =1.000e+00
* *** Temperature effect parameters ***
+AT =3.300e+04 UTE =-1.49e+00
+KT1 =-5.34e-01 KT2 =2.200e-02 KT1L =0.000e+00
+UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00
+PRT =0.000e+00
* *** Overlap capacitance related and dynamic model parameters ***
+CGDO =3.500e-10 CGSO =3.500e-10 CGBO =1.500e-10
+CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01
+CF =0.000e+00 ELM =5.000e+00
+XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01
* *** Parasitic resistance and capacitance related model parameters +RDSW
=2.979e+03
+CDSC =0.000e+00 CDSCB =1.000e-05 CDSCD =0.000e+00
+PRWB =0.000e+00 PRWG =0.000e+00 CIT =0.000e+00
* *** Process and parameters extraction related model parameters ***
+TOX =1.627e-08 NGATE =0.000e+00
+NLX =1.466e-07
* *** Substrate current related model parameters ***
+ALPHA0 =0.000e+00 BETA0 =3.000e+01
* *** Noise effect related model parameters ***
+AF =1.279e+00 KF =6.314e-29 EF =1.000e+00
+NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12
* *** Common extrinsic model parameters ***
+LINT =5.486e-08 WINT =3.844e-07 XJ =3.000e-07
+RSH =4.800e+01 JS =4.000e-05
+CJ =4.900e-04 CJSW =2.100e-10
+MJ =4.700e-01 MJSW =2.900e-01
+PB =8.000e-01 TT =0.000e+00
+PBSW =8.000e-01
* ----------------------------------------------------------------------
.SUBCKT ND A C PARAMS: AREA=1e-12 PERI=4e-6
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format : PSPICE
* model : DIODE
* process : CY[EB]
* revision : B;
* extracted : CYE I310SE00; 1999-03; ese(487)
* doc# : 9933006 REV_B
* ----------------------------------------------------------------------
* TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
* TERMINALS: A=anode=P-region C=cathode=N-region
* VARIABLES: M (mulitiplier), AREA [m^2], PERI [m].
* NOTE: The role of a protection DIODE is to conduct ESD current to VDD
* (or from VSS). This forward bias is NOT modelled, only leakage current
* and capacitance during normal operation. Any inductive load etc that
138
* will give forward bias, must be limited by other components to within
* Operating Conditions, otherwise parasitic bipolar action can occur.
*
D1 A C NDINSUBA {AREA}
D2 A C NDINSUBS {PERI}
.ENDS ND
*
.MODEL NDINSUBA D
+IS =1.000e-05 N =1.000e+00
+CJO =2.900e-04 M =4.600e-01 VJ =8.600e-01
+TT =0.000e+00 FC =0.500e+00
+EG =1.110e+00 XTI =3.000e+00
+AF =1.000e+00 KF =0.000e+00
.MODEL NDINSUBS D
+IS =0.000e+00 N =1.000e+00
+CJO =2.300e-10 M =3.300e-01 VJ =8.600e-01
+TT =0.000e+00 FC =0.500e+00
+EG =1.110e+00 XTI =3.000e+00
+AF =1.000e+00 KF =0.000e+00
* ----------------------------------------------------------------------
Параметры SPICE-моделей КМОП-библиотеки AMS-0,35 мкм:
.MODEL MODN NMOS LEVEL=7
* ----------------------------------------------------------------------
************************* SIMULATION PARAMETERS ************************
* ----------------------------------------------------------------------
* format : PSPICE
* model : MOS BSIM3v3
* process : CS[ADFI]
* revision : N/C;
* extracted : CSA C61417; 1998-10; ese(487)
* doc# : 9933016 REV_N/C
* ----------------------------------------------------------------------
* TYPICAL MEAN CONDITION
* ----------------------------------------------------------------------
* *** Flags ***
+MOBMOD =1.000e+00 CAPMOD =2.000e+00
+NLEV =0
* *** Threshold voltage related model parameters ***
+K1 =6.044e-01
+K2 =2.945e-03 K3 =-1.72e+00 K3B =6.325e-01
+NCH =2.310e+17 VTH0 =4.655e-01
+VOFF =-5.72e-02 DVT0 =2.227e+01 DVT1 =1.051e+00
+DVT2 =3.393e-03 KETA =-6.21e-04
+PSCBE1 =2.756e+08 PSCBE2 =9.645e-06
+DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00
* *** Mobility related model parameters ***
+UA =1.000e-12 UB =1.723e-18 UC =5.756e-11
+U0 =4.035e+02
* *** Subthreshold related parameters ***
+DSUB =5.000e-01 ETA0 =3.085e-02 ETAB =-3.95e-02
+NFACTOR=1.119e-01
* *** Saturation related parameters ***
+EM =4.100e+07 PCLM =6.831e-01

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