Теория и практика перевода. Беляева Л.Н. - 167 стр.

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ПРИНЦИПЫ РАБОТЫ С РЕЗУЛЬТАТАМИ МАШИННОГО ПЕРЕВОДА

167

actual and imaginary parts of complex dielectric permit

tivity, caused by absorption of respective wavelength

irradiation of visible spectrum area, are interpreted as a

photodielectric effect (PDE). If a change of capacity value C

in the capacitor is caused by increment of the photo

conductor which is used as a dielectric, then this

phenomenon is defined as the firsttype effect (PDE I). If a

change in capacity results from the change of photo

conductivity and, consequently, that of effective thickness

of the photodielectric, then it is defined as the secondtype

effect (PDE II).

It was in 1909 when Lenard and Saeland for the first time

observed a change of capacity in the process of illumination

of a capacitor dielectric. Subsequently in 20ies, B. Gudden

and R. Pohl studied this phenomenon at greater length with

regard to powder zinc sulphide ZnS. Further research has

revealed PDE manifestation in the multitude of

photosensitive semiconductor compounds, used in solidstate

electronics of CdS, CdTe, ZnO, SbSJ, etc. The effect has been

thoroughly studied in many inorganic and organic

photoconductors [1



5] on powder samples.

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